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MCC 312 MCD 312
Thyristor Modules Thyristor/Diode Modules
ITRMS = 2x 520 A ITAVM = 2x 320 A VRRM = 1200-1800 V
3
VRSM VDSM V 1300 1500 1700 1900
VRRM VDRM V
Type
2
76
5 4
1
1200 1400 1600 1800
MCC MCC MCC MCC
312-12io1 312-14io1 312-16io1 312-18io1
MCD MCD MCD MCD
312-12io1 312-14io1 312-16io1 312-18io1
3
671
542
Symbol ITRMS, IFRMS ITAVM, IFAVM ITSM, IFSM
Test Conditions TVJ = TVJM TC = 85C; 180 sine TVJ = 45C; VR = 0 TVJ = TVJM VR = 0 t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) t = 10 ms (50 Hz) t = 8.3 ms (60 Hz)
Maximum Ratings 520 320 9200 10100 8000 8800 423 000 423 000 320 000 321 000 100 A A A A A A A2s A2s A2s A2s A/ms
MCC
3 1 5 42
MCD
oi2dt
TVJ = 45C VR = 0 TVJ = TVJM VR = 0
(di/dt)cr
TVJ = TVJM repetitive, IT = 960 A f =50 Hz, tP =200 ms VD = 2/3 VDRM IG = 1 A, non repetitive, IT = ITAVM diG/dt = 1 A/ms TVJ = TVJM; VDR = 2/3 VDRM RGK = ; method 1 (linear voltage rise) TVJ = TVJM IT = ITAVM tP = 30 ms tP = 500 ms
500 1000 120 60 20 10 -40...+140 140 -40...+125
A/ms V/ms W W W V C C C V~ V~
Features International standard package Direct copper bonded Al2O3-ceramic with copper base plate Planar passivated chips Isolation voltage 3600 V~ UL registered E 72873 Keyed gate/cathode twin pins
q q q q q q
(dv/dt)cr PGM PGAV VRGM TVJ TVJM Tstg VISOL Md Weight
Applications Motor control, softstarter Power converter Heat and temperature control for industrial furnaces and chemical processes Lighting control Solid state switches
q q q q q
q q
50/60 Hz, RMS IISOL 1 mA
t = 1 min t=1s
3000 3600
q
Mounting torque (M6) Terminal connection torque (M8) Typical including screws
4.5-7/40-62 Nm/lb.in. 11-13/97-115 Nm/lb.in. 750 g
Advantages Simple mounting Improved temperature and power cycling Reduced protection circuits
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions
(c) 2000 IXYS All rights reserved
1-4
MCC 312 MCD 312
Symbol IRRM, IDRM VT, VF VT0 rT VGT IGT VGD IGD IL IH tgd tq QS IRM RthJC RthJK dS dA a Test Conditions TVJ = TVJM; VR = VRRM; VD = VDRM IT, IF = 600 A; TVJ = 25C For power-loss calculations only (TVJ = 140C) VD = 6 V; VD = 6 V; TVJ = TVJM; TVJ = TVJM; TVJ = 25C TVJ = -40C TVJ = 25C TVJ = -40C VD = 2/3 VDRM VD = 2/3 VDRM Characteristic Values 40 1.32 0.8 0.68 2 3 150 220 0.25 10 200 150 2 200 760 275 0.12 0.06 0.16 0.08 mA V V mW V V mA mA V mA mA
IGD, TVJ = 140C 4: PGM = 20 W 5: PGM = 60 W 6: PGM = 120 W 100 IG 101 A 102 2 1 1 4 VG 10 1: IGT, TVJ = 140C
V
2: IGT, TVJ = 25C 3: IGT, TVJ = -40C
3 6 5
TVJ = 25C; tP = 30 ms; VD = 6 V IG = 0.45 A; diG/dt = 0.45 A/ms TVJ = 25C; VD = 6 V; RGK = TVJ = 25C; VD = 1/2 VDRM IG = 1 A; diG/dt = 1 A/ms TVJ = TVJM; IT = 300 A, tP = 200 ms; -di/dt = 10 A/ms typ. VR = 100 V; dv/dt = 50 V/ms; VD = 2/3 VDRM TVJ = 125C; IT, IF = 300 A; -di/dt = 50 A/ms per thyristor (diode); DC current per module per thyristor (diode); DC current per module Creeping distance on surface Creepage distance in air Maximum allowable acceleration
mA ms ms mC A K/W K/W K/W K/W
0.1 10-3
10-2
10-1
Fig. 1 Gate trigger characteristics
100
TVJ = 25C
s
tgd typ. Limit
other values see Fig. 8/9
12.7 mm 9.6 mm 50 m/s2
10
Optional accessories for modules Keyed Gate/Cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red Type ZY 180 L (L = Left for pin pair 4/5) UL 758, style 1385, Type ZY 180 R (R = Right for pin pair 6/7) CSA class 5851, guide 460-1-1
1 0.01 0.1 1 IG A 10
Dimensions in mm (1 mm = 0.0394") MCC
M8x20
MCD
M8x20
Fig. 2 Gate trigger delay time
(c) 2000 IXYS All rights reserved
2-4
MCC 312 MCD 312
10000 106
ITSM
A
8000
50 Hz 80 % VRRM TVJ = 45C TVJ = 140C
It As
2
2
VR = 0V
600 A
ITAVM 500 I
FAVM
TVJ = 45C
400 6000 105 4000 200 2000
TVJ = 140C
DC 180 sin 120 60 30
300
100
0 0.001
104 0.01 0.1
0 1 t ms 10 0 25 50 75 100
TC
s t
1
125 C 150
Fig. 3 Surge overload current ITSM, IFSM: Crest value, t: duration
600 Ptot W 500
Fig. 4 I2t versus time (1-10 ms)
Fig. 4a Maximum forward current at case temperature Fig. 5 Power dissipation versus onstate current and ambient temperature (per thyristor or diode)
RthKA K/W
400
0.06 0.1 0.2 0.3 0.4 0.6 0.8
DC 180 sin 120 60 30
300
200
100
0 0 100 200 300 400 500 A 0 ITAVM / IFAVM 25 50 75 100 125 C TA 150
3000 Ptot W 2500
RthKA K/W
2000
0.02 0.04 0.07 0.1 0.15 0.2 0.3
Fig. 6 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature
1500 Circuit B6 3xMCC312 or 3xMCD312 500
1000
0 0 200 400 600 800 A IdAVM 0 25 50 75 100 C 125 TA 150
(c) 2000 IXYS All rights reserved
3-4
MCC 312 MCD 312
3000 W 2500 Ptot 2000 RthKA K/W
1500
0.02 0.04 0.07 0.1 0.15 0.2 0.3
Fig. 7 Three phase AC-controller: Power dissipation versus RMS output current and ambient temperature
1000
500
Circuit W3 3xMCC312 or 3xMCD312
0 0 200 400 600 A IRMS 0 25 50 75 100 125 C 150 TA
0.20 K/W
0.15 ZthJC 0.10 30 60 120 180 DC
Fig. 8 Transient thermal impedance junction to case (per thyristor or diode) RthJC for various conduction angles d: d DC 180 120 60 30 RthJC (K/W) 0.120 0.128 0.135 0.153 0.185
0.05
Constants for ZthJC calculation: i
0.00 10-3 10-2 10-1 100 101 t s 102
Rthi (K/W) 0.0058 0.031 0.072 0.0112
ti (s) 0.00054 0.098 0.54 12
1 2 3 4
0.25 K/W 0.20 ZthJK 0.15
Fig. 9 Transient thermal impedance junction to heatsink (per thyristor or diode) RthJK for various conduction angles d: d DC 180 120 60 30 RthJK (K/W) 0.160 0.168 0.175 0.193 0.225
0.10
0.05
30 60 120 180 DC
Constants for ZthJK calculation: i Rthi (K/W) 0.0058 0.031 0.072 0.0112 0.04 ti (s) 0.00054 0.098 0.54 12 12 1 2 3 4 5
0.00 10-3
10-2
10-1
100
101 t
s
102
(c) 2000 IXYS All rights reserved
4-4

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